View MRF7S15100HR3_4461412.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Freescale Semiconductor Technical Data
Document Number: MRF7S15100H Rev. 0, 7/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1470 to 1510 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 23 Watts Avg., f = 1507.5 MHz, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 19.5 dB Drain Efficiency -- 32% Device Output Signal PAR -- 6.2 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 38 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 1490 MHz, 100 Watts CW Output Power * Typical Pout @ 1 dB Compression Point ' 100 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S15100HR3 MRF7S15100HSR3
1510 MHz, 23 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465- 06, STYLE 1 NI - 780 MRF7S1500HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF7S1500HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1)
Symbol VDSS VGS VDD Tstg TC TJ
Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 55 W CW Case Temperature 77C, 23 W CW Symbol RJC Value (2) 0.65 0.74 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF7S15100HR3 MRF7S15100HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class IC (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDD = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 174 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 600 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.74 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 0.6 300 176 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1.2 2 0.1 2 2.7 0.2 2.7 3.5 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, Pout = 23 W Avg., f = 1507.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. Gps D PAR ACPR IRL 18 30 5.9 -- -- 19.5 32 6.2 - 38 - 15 21 -- -- - 35 -8 dB % dB dBc dB (continued)
MRF7S15100HR3 MRF7S15100HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 90 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 23 W Avg. Average Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 100 W CW Average Group Delay @ Pout = 100 W CW, f = 1490 MHz Part - to - Part Insertion Phase Variation @ Pout = 100 W CW, f = 1490 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol P1dB IMDsym Min -- -- Typ 100 40 Max -- -- Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, 1470 - 1510 MHz Bandwidth
VBWres GF Delay G P1dB
-- -- -- -- -- -- --
70 0.2 4.5 1.9 23 0.010 0.007
-- -- -- -- -- -- --
MHz dB ns dB/C W/C
MRF7S15100HR3 MRF7S15100HSR3 RF Device Data Freescale Semiconductor 3
R2 B1 VBIAS + R3 C5 C4 C3 R1 RF INPUT Z1 C2 Z2 Z3 Z4 Z5 C1 L3 L2 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 L1
+ C8 Z26 Z14 Z15 Z28 C11 C10 C9
VSUPPLY
Z16 Z17 Z18 Z19 Z20 C6
Z21 Z22 Z23
Z24
Z25
RF OUTPUT
Z29 Z27 DUT
VSUPPLY C7 C12 C13
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14
0.084 0.149 0.149 0.149 0.084 0.084 0.218 0.084 0.224 0.084 1.288 1.288 1.288 1.330
x 0.078 Microstrip x 0.153 Microstrip x 0.303 Microstrip x 0.065 Microstrip x 0.146 Microstrip x 0.104 Microstrip x 0.080 Microstrip x 0.206 Microstrip x 0.085 Microstrip x 0.369 Microstrip x 0.206 Microstrip x 0.144 Microstrip x 0.369 Microstrip x 0.112 Microstrip
Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 Z24 Z25 Z26, Z27 Z28, Z29 PCB
1.330 x 0.538 Microstrip 0.270 x 0.280 Microstrip 0.187 x 0.150 Microstrip 0.084 x 0.042 Microstrip 0.184 x 0.292 Microstrip 0.084 x 0.066 Microstrip 0.886 x 0.194 Microstrip 0.300 x 0.084 Microstrip 0.084 x 0.215 Microstrip 0.221 x 0.075 Microstrip 0.084 x 0.175 Microstrip 0.200 x 0.525 Microstrip 0.235 x 0.102 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF7S15100HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S15100HR3(HSR3) Test Circuit Component Designations and Values
Part B1 C1, C6, C7, C8 C2 C3 C4, C9, C13 C5, C10 C11, C12 L1, L2, L3 R1, R2 R3 Description Short Ferrite Bead 15 pF Chip Capacitors 0.5 pF Chip Capacitor 10 pF Chip Capacitor 6.8 F, 50 V Chip Capacitors 100 F, 50 V Electrolytic Capacitors 2.2 F, 50 V Chip Capacitors 7.15 nH Inductors 100 , 1/4 W Chip Resistors 10 K, 1/4 W Chip Resistor Part Number 2743019447 ATC100B150JT500XT ATC100B0R5BT500XT ATC100B100JT500XT C4532JB1H685MT 222215371101 C3225JB2A225MT 1606 - TLC CRCW12061000FKEA CRCW12061002FKEA Manufacturer Fair - Rite ATC ATC ATC TDK Vishay TDK Coilcraft Vishay Vishay
MRF7S15100HR3 MRF7S15100HSR3 4 RF Device Data Freescale Semiconductor
R3
B1
R2
C3 C4 R1 C5 C2 CUT OUT AREA C1 L1
C8
C11
C9
C10
C6
L3
L2
C7 MRF7S15100H/HS Rev. 3
C12
C13
Figure 2. MRF7S15100HR3(HSR3) Test Circuit Component Layout
MRF7S15100HR3 MRF7S15100HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 20 19 18 Gps, POWER GAIN (dB) 17 16 15 14 13 12 11 10 1400 IRL 1425 1450 1475 1500 1525 1550 ACPR 1575 VDD = 28 Vdc, Pout = 23 W (Avg.) IDQ = 600 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF PARC D Gps 35 34 33 32 31 -36 -37 ACPR (dBc) -38 -39 -40 -41 1600 IRL, INPUT RETURN LOSS (dB) -5 -10 -15 -20 -25 -30 -0.7 -0.8 -0.9 -1 -1.1 -1.2 PARC (dB)
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 23 Watts Avg.
20 IDQ = 900 mA 19 750 mA 600 mA 18 450 mA 17 300 mA 16 1 10 Pout, OUTPUT POWER (WATTS) CW 100 200 VDD = 28 Vdc, f = 1490 MHz CW Measurements -10 -20 -30 -40 -50 -60 -70 1 10 TWO-TONE SPACING (MHz) 100 IM7-U IM7-L VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 600 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1490 MHz IM3-L IM3-U IM5-U IM5-L
IMD, INTERMODULATION DISTORTION (dBc)
Gps, POWER GAIN (dB)
Figure 4. CW Power Gain versus Output Power
Figure 5. Intermodulation Distortion Products versus Tone Spacing
-15 -20 -25 -30 -35 -40 -45 ACPR (dBc)
21 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 20 Gps, POWER GAIN (dB) 19 18 17 16 15
1 0 -1 -2 -3 -4 -5 15
ACPR -1 dB = 24.14 W -2 dB = 32.65 W Gps
45 40 35
-3 dB = 43.29 W PARC
30 25
25
35
45
55
65
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
MRF7S15100HR3 MRF7S15100HSR3 6 RF Device Data Freescale Semiconductor
D, DRAIN EFFICIENCY (%)
VDD = 28 Vdc, IDQ = 600 mA, f = 1490 MHz, Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
55 D 50
TYPICAL CHARACTERISTICS
22 VDD = 28 Vdc, IDQ = 600 mA, f = 1490 MHz Single-Carrier W-CDMA, 3.84 MHz 20 Channel Bandwidth Gps, POWER GAIN (dB) 18 Gps 16 14 ACPR 12 10 1 D Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 10 Pout, OUTPUT POWER (WATTS) AVG. 100 15 0 200 25_C TC = -30_C 85_C 85_C 45 30 85_C 25_C 25_C -30_C 75 D, DRAIN EFFICIENCY (%) 60 -25 -32 -39 -46 -53 -60 ACPR (dBc) -ACPR in 3.84 MHz Integrated BW 3.6 90 -18
Figure 7. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
25 0
20 S21 S21 (dB)
-5
10 VDD = 28 Vdc IDQ = 600 mA
-15
5
S11
-20
0 -25 1150 1250 1350 1450 1550 1650 1750 1850 1950 2050 2150 2250 f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W - CDMA TEST SIGNAL
100 10 -30 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 -50 -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 5.4 7.2 9 -ACPR in 3.84 MHz Integrated BW -40 -10 -20 3.84 MHz Channel BW
PEAK-TO-AVERAGE (dB)
Figure 9. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
f, FREQUENCY (MHz)
Figure 10. Single - Carrier W - CDMA Spectrum MRF7S15100HR3 MRF7S15100HSR3 RF Device Data Freescale Semiconductor 7
S11 (dB)
15
-10
Zo = 10
Zload f = 1570 MHz f = 1410 MHz
f = 1570 MHz f = 1410 MHz Zsource
VDD = 28 Vdc, IDQ = 600 mA, Pout = 23 W Avg. f MHz 1410 1430 1450 1470 1490 1510 1530 1550 1570 Zsource W 2.51 - j5.82 2.53 - j5.58 2.55 - j5.36 2.58 - j5.15 2.62 - j4.97 2.67 - j4.81 2.73 - j4.68 2.79 - j4.57 2.85 - j4.49 Zload W 4.12 - j4.20 3.95 - j4.07 3.78 - j3.94 3.61 - j3.80 3.45 - j3.65 3.30 - j3.51 3.15 - j3.37 3.00 - j3.22 2.87 - j3.06
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance MRF7S15100HR3 MRF7S15100HSR3 8 RF Device Data Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
56 55 Pout, OUTPUT POWER (dBm) 54 53 52 51 50 49 48 47 46 27 28 29 30 P1dB = 50.95 dBm (125 W) P3dB = 51.63 dBm (146 W)
Ideal
Actual
VDD = 28 Vdc, IDQ = 600 mA, Pulsed CW 10 sec(on), 10% Duty Cycle, f = 1500 MHz 31 32 33 34 35 36 37
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource P1dB 2.02 + j6.21 Zload 2.00 - j3.65
Figure 12. Pulsed CW Output Power versus Input Power @ 28 V
MRF7S15100HR3 MRF7S15100HSR3 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF7S15100HR3
4X U (FLANGE)
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
CASE 465A - 06 ISSUE H NI - 780S MRF7S15100HSR3
MRF7S15100HR3 MRF7S15100HSR3 10 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date July 2008 * Initial Release of Data Sheet Description
MRF7S15100HR3 MRF7S15100HSR3 RF Device Data Freescale Semiconductor 11
How to Reach Us:
Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 Fax: +1 - 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2008. All rights reserved.
MRF7S15100HR3 MRF7S15100HSR3
Rev. 12 0, 7/2008 Document Number: MRF7S15100H
RF Device Data Freescale Semiconductor

▲Up To Search▲

Price & Availability of MRF7S15100HR3

	To Download MRF7S15100HR3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .